DMT4008LFV-13 DIODES INCORPORATED
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 1.9W
Polarisation: unipolar
On-state resistance: 12mΩ
Drain current: 9.7A
Drain-source voltage: 40V
Gate charge: 17.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-MOSFET
Power dissipation: 1.9W
Polarisation: unipolar
On-state resistance: 12mΩ
Drain current: 9.7A
Drain-source voltage: 40V
Gate charge: 17.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
кількість в упаковці: 3000 шт
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Технічний опис DMT4008LFV-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W, Case: PowerDI3333-8, Kind of package: reel; tape, Mounting: SMD, Type of transistor: N-MOSFET, Power dissipation: 1.9W, Polarisation: unipolar, On-state resistance: 12mΩ, Drain current: 9.7A, Drain-source voltage: 40V, Gate charge: 17.1nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 70A, кількість в упаковці: 3000 шт.
Інші пропозиції DMT4008LFV-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DMT4008LFV-13 | Виробник : Diodes Incorporated |
 MOSFET MOSFET BVDSS: 31V-40V |
товар відсутній |
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| DMT4008LFV-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W Case: PowerDI3333-8 Kind of package: reel; tape Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 1.9W Polarisation: unipolar On-state resistance: 12mΩ Drain current: 9.7A Drain-source voltage: 40V Gate charge: 17.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A |
товар відсутній |