DMT4011LSS-13

DMT4011LSS-13 Diodes Incorporated


DMT4011LSS.pdf Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 10.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.31W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 829 pF @ 20 V
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Технічний опис DMT4011LSS-13 Diodes Incorporated

Description: MOSFET N-CH 40V 10.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V, Power Dissipation (Max): 1.31W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 829 pF @ 20 V.

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DMT4011LSS-13 DMT4011LSS-13 Виробник : Diodes Incorporated DIOD_S_A0008533963_1-2543367.pdf MOSFET MOSFET BVDSS: 31V 40V SO-8 T&R 2.5K
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