Технічний опис DSEP12-12BZ-TRL Littelfuse
Description: DIODE GEN PURP 1.2KV 12A TO263HV, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 70 ns, Technology: Standard, Capacitance @ Vr, F: 5pF @ 600V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: TO-263HV, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Інші пропозиції DSEP12-12BZ-TRL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DSEP12-12BZ-TRL | Виробник : IXYS |
 Description: DIODE GEN PURP 1.2KV 12A TO263HVPackaging: Tape & Reel (TR) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 600V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
товар відсутній |
|
 |
DSEP12-12BZ-TRL | Виробник : IXYS |
Discrete Semiconductor Modules PWR DISC-FRED |
товар відсутній |