EMT1FHAT2R Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: PNP+PNP GENERAL PURPOSE AMPLIFIC
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6742 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 22.86 грн |
| 16+ | 17.2 грн |
| 100+ | 10.3 грн |
| 500+ | 8.95 грн |
| 1000+ | 6.08 грн |
| 2000+ | 5.6 грн |
Відгуки про товар
Написати відгук
Технічний опис EMT1FHAT2R Rohm Semiconductor
Description: PNP+PNP GENERAL PURPOSE AMPLIFIC, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 150mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V, Frequency - Transition: 140MHz, Supplier Device Package: EMT6, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції EMT1FHAT2R за ціною від 9.71 грн до 35.45 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
EMT1FHAT2R | Виробник : ROHM Semiconductor |
Bipolar Transistors - BJT PNP+PNP General Purpose Amplification Transistor |
на замовлення 7756 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
EMT1FHAT2R | Виробник : Rohm Semiconductor |
Description: PNP+PNP GENERAL PURPOSE AMPLIFIC Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 140MHz Supplier Device Package: EMT6 Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |