EPC2034
Виробник: EPCDescription: GANFET N-CH 200V 48A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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Технічний опис EPC2034 EPC
Description: GANFET N-CH 200V 48A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 7mA, Supplier Device Package: Die, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V.
Інші пропозиції EPC2034
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EPC2034 | Виробник : EPC |
Description: GANFET N-CH 200V 48A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
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