EPC2101ENGRT

Виробник: EPC
Description: GANFET 2N-CH 60V 9.5A/38A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Discontinued at Digi-Key

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Технічний опис EPC2101ENGRT EPC

Description: GANFET 2N-CH 60V 9.5A/38A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A, Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 2mA, Supplier Device Package: Die, Part Status: Discontinued at Digi-Key.

Інші пропозиції EPC2101ENGRT

Фото	Назва	Виробник	Інформація	Доступність	Ціна без ПДВ
	EPC2101ENGRT	Виробник : EPC	Description: GANFET 2N-CH 60V 9.5A/38A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: Die Part Status: Discontinued at Digi-Key	товар відсутній