EPC2102
Виробник: EPCDescription: GANFET 2N-CH 60V 23A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 610.24 грн |
| 10+ | 504.26 грн |
| 100+ | 420.17 грн |
Відгуки про товар
Написати відгук
Технічний опис EPC2102 EPC
Description: GANFET 2N-CH 60V 23A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 23A, Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V, Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V, Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 7mA, Supplier Device Package: Die, Part Status: Active.
Інші пропозиції EPC2102
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
EPC2102 | Виробник : EPC |
Description: GANFET 2N-CH 60V 23A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die Part Status: Active |
товар відсутній |