EPC2103ENGRT

Виробник: EPC
Description: GANFET 2N-CH 80V 23A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die

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Технічний опис EPC2103ENGRT EPC

Description: GANFET 2N-CH 80V 23A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 23A, Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 7mA, Supplier Device Package: Die.

Інші пропозиції EPC2103ENGRT

Фото	Назва	Виробник	Інформація	Доступність	Ціна без ПДВ
	EPC2103ENGRT	Виробник : EPC	Description: GANFET 2N-CH 80V 23A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 23A Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 40V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die	товар відсутній