EPC8009
Виробник: EPC
Description: GANFET N-CH 65V 4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 32.5 V
Description: GANFET N-CH 65V 4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 32.5 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 113.82 грн |
5000+ | 105.15 грн |
Відгуки про товар
Написати відгук
Технічний опис EPC8009 EPC
Description: GANFET N-CH 65V 4A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 32.5 V.
Інші пропозиції EPC8009 за ціною від 109.24 грн до 233.99 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
EPC8009 | Виробник : EPC |
Description: GANFET N-CH 65V 4A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 0.45 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 32.5 V |
на замовлення 9098 шт: термін постачання 21-31 дні (днів) |
|