ER2DF_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: DIODE GEN PURP 200V 2A SMBF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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Технічний опис ER2DF_R2_00001 Panjit International Inc.
Description: DIODE GEN PURP 200V 2A SMBF, Packaging: Tape & Reel (TR), Package / Case: DO-221AA, SMB Flat Leads, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 30pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: SMBF, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A, Current - Reverse Leakage @ Vr: 1 µA @ 200 V.
Інші пропозиції ER2DF_R2_00001
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ER2DF_R2_00001 | Виробник : Panjit International Inc. |
Description: DIODE GEN PURP 200V 2A SMBF Packaging: Cut Tape (CT) Package / Case: DO-221AA, SMB Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMBF Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
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ER2DF_R2_00001 | Виробник : Panjit |
Rectifiers 200V,Super Fast Recovery Rectifiers,SMBF,2A |
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ER2DF-R2-00001 | Виробник : Panjit |
Rectifiers |
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