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FCB20N60F-F085

FCB20N60F-F085 onsemi


fcb20n60f_f085-d.pdf Виробник: onsemi
Description: MOSFET N-CH 600V 20A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 20A, 10V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V
Qualification: AEC-Q101
на замовлення 640 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
75+267.41 грн
Мінімальне замовлення: 75
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Технічний опис FCB20N60F-F085 onsemi

Description: MOSFET N-CH 600V 20A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 195mOhm @ 20A, 10V, Power Dissipation (Max): 405W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V, Qualification: AEC-Q101.

Інші пропозиції FCB20N60F-F085

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
FCB20N60F-F085 FCB20N60F-F085 Виробник : ON Semiconductor / Fairchild FCB20N60F_F085-1122346.pdf MOSFET 600V, 20A SuperFET
на замовлення 775 шт:
термін постачання 21-30 дні (днів)
FCB20N60F-F085 Виробник : ONSEMI ONSM-S-A0013185650-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - FCB20N60F-F085 - FCB20N60F_F085 - N-CHANNEL MOSFET 600V
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
на замовлення 640 шт:
термін постачання 21-31 дні (днів)
FCB20N60F-F085 FCB20N60F-F085 Виробник : ON Semiconductor 3345629332836829fcb20n60f_f085.pdf Trans MOSFET N-CH 600V 20A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
товар відсутній
FCB20N60F-F085 FCB20N60F-F085 Виробник : ON Semiconductor 3345629332836829fcb20n60f_f085.pdf Trans MOSFET N-CH 600V 20A Automotive 3-Pin(2+Tab) D2PAK T/R
товар відсутній
FCB20N60F-F085 FCB20N60F-F085 Виробник : onsemi fcb20n60f_f085-d.pdf Description: MOSFET N-CH 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 20A, 10V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
FCB20N60F-F085 FCB20N60F-F085 Виробник : onsemi fcb20n60f_f085-d.pdf Description: MOSFET N-CH 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 20A, 10V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V
Qualification: AEC-Q101
товар відсутній