Технічний опис FCH041N60F-F085 ON Semiconductor
Description: MOSFET N-CH 600V 76A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V, Power Dissipation (Max): 595W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 347 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції FCH041N60F-F085
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| FCH041N60F-F085 | Виробник : ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Pulsed drain current: 228A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 277nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FCH041N60F-F085 | Виробник : ON Semiconductor |
Trans MOSFET N-CH 600V 76A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube |
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FCH041N60F-F085 | Виробник : ON Semiconductor |
Trans MOSFET N-CH 600V 76A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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FCH041N60F-F085 | Виробник : onsemi |
Description: MOSFET N-CH 600V 76A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 347 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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FCH041N60F-F085 | Виробник : onsemi / Fairchild |
MOSFET Auto SuperFET2 600V 41mOhm, 76A, FRFET |
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| FCH041N60F-F085 | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Pulsed drain current: 228A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 277nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |