Технічний опис FCH22N60N ON Semiconductor
Description: MOSFET N-CH 600V 22A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V, Power Dissipation (Max): 205W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V.
Інші пропозиції FCH22N60N
| Фото | Назва | Виробник | Інформація |
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FCH22N60N | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-247 Tube |
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| FCH22N60N | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 66A; 205W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Pulsed drain current: 66A Power dissipation: 205W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FCH22N60N | Виробник : onsemi |
Description: MOSFET N-CH 600V 22A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V |
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FCH22N60N | Виробник : onsemi |
Description: MOSFET N-CH 600V 22A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V |
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FCH22N60N | Виробник : onsemi / Fairchild |
MOSFET SUPREMOS 22A-TO247 |
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| FCH22N60N | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 66A; 205W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Pulsed drain current: 66A Power dissipation: 205W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced |
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