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FDD24AN06LA0_SB82179

FDD24AN06LA0_SB82179 onsemi


Виробник: onsemi
Description: MOSFET N-CH 60V 7.1A/40A TO252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
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Технічний опис FDD24AN06LA0_SB82179 onsemi

Description: MOSFET N-CH 60V 7.1A/40A TO252AA, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V.

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FDD24AN06LA0_SB82179 Виробник : onsemi / Fairchild MOSFET
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