FDG6332C-F085P

FDG6332C-F085P ON Semiconductor


1827691775141393fdg6332c_f085.pdf Виробник: ON Semiconductor
P Channel MOSFET
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Технічний опис FDG6332C-F085P ON Semiconductor

Description: MOSFET N/P-CH 20V 0.7A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 600mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V, 114pF @ 10V, Rds On (Max) @ Id, Vgs: 300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V, 2nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-70-6, Part Status: Obsolete, Grade: Automotive, Qualification: AEC-Q101.

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FDG6332C-F085P FDG6332C-F085P Виробник : onsemi fdg6332c_f085-d.pdf Description: MOSFET N/P-CH 20V 0.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V, 114pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V, 2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
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FDG6332C-F085P FDG6332C-F085P Виробник : ON Semiconductor FDG6332C_F085-D-1494400.pdf MOSFET DUAL NP MOS SC70-6 20V
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