FES3DSR TRTB FAGOR
Виробник: FAGOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DO214AB; Ufmax: 900mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Capacitance: 50pF
Case: DO214AB
Max. forward voltage: 0.9V
Max. forward impulse current: 125A
Leakage current: 0.1mA
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DO214AB; Ufmax: 900mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Capacitance: 50pF
Case: DO214AB
Max. forward voltage: 0.9V
Max. forward impulse current: 125A
Leakage current: 0.1mA
кількість в упаковці: 1 шт
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Технічний опис FES3DSR TRTB FAGOR
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DO214AB; Ufmax: 900mV, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 200V, Load current: 3A, Reverse recovery time: 25ns, Semiconductor structure: single diode, Capacitance: 50pF, Case: DO214AB, Max. forward voltage: 0.9V, Max. forward impulse current: 125A, Leakage current: 0.1mA, кількість в упаковці: 1 шт.
Інші пропозиції FES3DSR TRTB
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FES3DSR TRTB | Виробник : FAGOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DO214AB; Ufmax: 900mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 25ns Semiconductor structure: single diode Capacitance: 50pF Case: DO214AB Max. forward voltage: 0.9V Max. forward impulse current: 125A Leakage current: 0.1mA |
товар відсутній |