FESB16BT-E3/45 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 100V 16A TO263AB
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Технічний опис FESB16BT-E3/45 Vishay General Semiconductor - Diodes Division
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 100V; 16A; 35ns; D2PAK; Ufmax: 0.975V; tube, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 100V, Load current: 16A, Reverse recovery time: 35ns, Semiconductor structure: single diode, Features of semiconductor devices: glass passivated; ultrafast switching, Capacitance: 175pF, Case: D2PAK, Max. forward voltage: 0.975V, Max. forward impulse current: 250A, Leakage current: 500µA, Kind of package: tube.
Інші пропозиції FESB16BT-E3/45
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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FESB16BT-E3/45 | Виробник : Vishay General Semiconductor |
Rectifiers 16 Amp 100 Volt 35ns |
товар відсутній |
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| FESB16BT-E3/45 | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 16A; 35ns; D2PAK; Ufmax: 0.975V; tube Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 16A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 175pF Case: D2PAK Max. forward voltage: 0.975V Max. forward impulse current: 250A Leakage current: 500µA Kind of package: tube |
товар відсутній |