FF650R17IE4PBOSA1

FF650R17IE4PBOSA1 Infineon Technologies


175096631813704infineon-ff650r17ie4p-ds-v02_00-en.pdffileid5546d46253e9fadc0153e.pdf Виробник: Infineon Technologies
1700V PrimePACK 2 dual IGBT module with IGBT4, NTC and pre-applied Thermal Interface Material
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис FF650R17IE4PBOSA1 Infineon Technologies

Description: IGBT MODULE 1700V 650A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 650 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 54 nF @ 25 V.

Інші пропозиції FF650R17IE4PBOSA1

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
FF650R17IE4PBOSA1 FF650R17IE4PBOSA1 Виробник : Infineon Technologies Infineon-FF650R17IE4P-DS-v03_00-EN.pdf?fileId=5546d46253e9fadc0153efeab1493c89 Description: IGBT MODULE 1700V 650A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
товар відсутній