на замовлення 4000 шт:
термін постачання 168-177 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 321.61 грн |
| 10+ | 266.6 грн |
| 100+ | 187.32 грн |
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Технічний опис FGB40T65SPD-F085 onsemi / Fairchild
Description: IGBT FIELD STOP 650V 80A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 34 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/35ns, Switching Energy: 970µJ (on), 280µJ (off), Test Condition: 400V, 40A, 6Ohm, 15V, Gate Charge: 36 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 267 W.
Інші пропозиції FGB40T65SPD-F085
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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FGB40T65SPD-F085 | Виробник : ON Semiconductor |
 Trans IGBT Chip N-CH 650V 80A 267000mW Automotive 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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FGB40T65SPD-F085 | Виробник : ON Semiconductor |
Trans IGBT Chip N-CH 650V 80A 267W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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FGB40T65SPD-F085 | Виробник : ON Semiconductor |
Trans IGBT Chip N-CH 650V 80A 267W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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FGB40T65SPD-F085 | Виробник : onsemi |
Description: IGBT FIELD STOP 650V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/35ns Switching Energy: 970µJ (on), 280µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 36 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 267 W |
товар відсутній |
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FGB40T65SPD-F085 | Виробник : onsemi |
Description: IGBT FIELD STOP 650V 80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/35ns Switching Energy: 970µJ (on), 280µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 36 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 267 W |
товар відсутній |