FGB7N60UNDF onsemi
Виробник: onsemi
Description: IGBT NPT 600V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 32.3 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 7A
Supplier Device Package: D²PAK (TO-263)
IGBT Type: NPT
Td (on/off) @ 25°C: 5.9ns/32.3ns
Switching Energy: 99µJ (on), 104µJ (off)
Test Condition: 400V, 7A, 10Ohm, 15V
Gate Charge: 18 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 21 A
Power - Max: 83 W
Description: IGBT NPT 600V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 32.3 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 7A
Supplier Device Package: D²PAK (TO-263)
IGBT Type: NPT
Td (on/off) @ 25°C: 5.9ns/32.3ns
Switching Energy: 99µJ (on), 104µJ (off)
Test Condition: 400V, 7A, 10Ohm, 15V
Gate Charge: 18 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 21 A
Power - Max: 83 W
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
800+ | 60.66 грн |
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Технічний опис FGB7N60UNDF onsemi
Description: IGBT NPT 600V 14A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 32.3 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 7A, Supplier Device Package: D²PAK (TO-263), IGBT Type: NPT, Td (on/off) @ 25°C: 5.9ns/32.3ns, Switching Energy: 99µJ (on), 104µJ (off), Test Condition: 400V, 7A, 10Ohm, 15V, Gate Charge: 18 nC, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 21 A, Power - Max: 83 W.
Інші пропозиції FGB7N60UNDF
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
FGB7N60UNDF | Виробник : ON Semiconductor / Fairchild | IGBT Transistors 600V 7A NPT IGBT |
на замовлення 727 шт: термін постачання 21-30 дні (днів) |
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FGB7N60UNDF | Виробник : onsemi |
Description: IGBT NPT 600V 14A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 32.3 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 7A Supplier Device Package: D²PAK (TO-263) IGBT Type: NPT Td (on/off) @ 25°C: 5.9ns/32.3ns Switching Energy: 99µJ (on), 104µJ (off) Test Condition: 400V, 7A, 10Ohm, 15V Gate Charge: 18 nC Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 21 A Power - Max: 83 W |
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