FGP5N60UFDTU

FGP5N60UFDTU ON Semiconductor


1068070921430848fgp5n60ufd.pdf Виробник: ON Semiconductor
Trans IGBT Chip N-CH 600V 10A 81mW 3-Pin(3+Tab) TO-220AB Tube
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Технічний опис FGP5N60UFDTU ON Semiconductor

Description: IGBT 600V 10A 81W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 30 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5A, Supplier Device Package: TO-220-3, IGBT Type: Field Stop, Td (on/off) @ 25°C: 6ns/44ns, Switching Energy: 75µJ (on), 59µJ (off), Test Condition: 400V, 5A, 20Ohm, 15V, Gate Charge: 19.5 nC, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 15 A, Power - Max: 81 W.

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FGP5N60UFDTU FGP5N60UFDTU Виробник : onsemi FGP5N60UFD.pdf Description: IGBT 600V 10A 81W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5A
Supplier Device Package: TO-220-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 6ns/44ns
Switching Energy: 75µJ (on), 59µJ (off)
Test Condition: 400V, 5A, 20Ohm, 15V
Gate Charge: 19.5 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 81 W
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