Технічний опис FP25R12KT4B11BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 25A 160W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 25 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 160 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V.
Інші пропозиції FP25R12KT4B11BOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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FP25R12KT4B11BOSA1 | Виробник : Infineon Technologies |
 Trench and Field Stop IGBT Module |
товар відсутній |
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FP25R12KT4B11BOSA1 | Виробник : Infineon Technologies |
Trench and Field Stop IGBT Module |
товар відсутній |
|
 |
FP25R12KT4B11BOSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 25A 160W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 160 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V |
товар відсутній |