FP50R06W2E3B11BOMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT MODULE 600V 65A 175W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
на замовлення 3046 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 3150.97 грн |
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Технічний опис FP50R06W2E3B11BOMA1 Infineon Technologies
Category: IGBT modules, Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A, Case: AG-EASY2B-2, Max. off-state voltage: 0.6kV, Collector current: 50A, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Technology: EasyPIM™ 2B, Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Pulsed collector current: 100A, Power dissipation: 175W, кількість в упаковці: 1 шт.
Інші пропозиції FP50R06W2E3B11BOMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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FP50R06W2E3B11BOMA1 | Виробник : Infineon Technologies |
Trans IGBT Module N-CH 600V 65A 175000mW 23-Pin EASY2B-2 Tray |
товар відсутній |
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| FP50R06W2E3B11BOMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A Case: AG-EASY2B-2 Max. off-state voltage: 0.6kV Collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 2B Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 175W кількість в упаковці: 1 шт |
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FP50R06W2E3B11BOMA1 | Виробник : Infineon Technologies |
Description: IGBT MODULE 600V 65A 175W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 175 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V |
товар відсутній |
|
| FP50R06W2E3B11BOMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A Case: AG-EASY2B-2 Max. off-state voltage: 0.6kV Collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EasyPIM™ 2B Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 175W |
товар відсутній |