FQB25N33TM-F085 Fairchild Semiconductor
Виробник: Fairchild SemiconductorDescription: MOSFET N-CH 330V 25A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 330 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 159+ | 125.72 грн |
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Технічний опис FQB25N33TM-F085 Fairchild Semiconductor
Description: MOSFET N-CH 330V 25A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V, Power Dissipation (Max): 3.1W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 330 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції FQB25N33TM-F085 за ціною від 138.2 грн до 138.2 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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| FQB25N33TM-F085 | Виробник : ONSEMI |
Description: ONSEMI - FQB25N33TM-F085 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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FQB25N33TM-F085 | Виробник : ON Semiconductor |
Trans MOSFET N-CH 330V 25A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
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FQB25N33TM-F085 | Виробник : onsemi |
Description: MOSFET N-CH 330V 25A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V Power Dissipation (Max): 3.1W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 330 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V Qualification: AEC-Q101 |
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FQB25N33TM-F085 | Виробник : onsemi |
Description: MOSFET N-CH 330V 25A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 12.5A, 10V Power Dissipation (Max): 3.1W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 330 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V Qualification: AEC-Q101 |
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FQB25N33TM-F085 | Виробник : ON Semiconductor / Fairchild |
MOSFET 330V NCH MOSFET |
товар відсутній |