FQB46N15TM-AM002

FQB46N15TM-AM002 ON Semiconductor


fqb46n15.pdf Виробник: ON Semiconductor
Trans MOSFET N-CH 150V 45.6A 3-Pin(2+Tab) D2PAK T/R
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Технічний опис FQB46N15TM-AM002 ON Semiconductor

Description: MOSFET N-CH 150V 45.6A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45.6A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 22.8A, 10V, Power Dissipation (Max): 3.75W (Ta), 210W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D²PAK (TO-263), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V.

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FQB46N15TM_AM002 FQB46N15TM_AM002 Виробник : onsemi FQB46N15,%20FQI46N15.pdf Description: MOSFET N-CH 150V 45.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22.8A, 10V
Power Dissipation (Max): 3.75W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
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