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FQB6N70TM

FQB6N70TM Fairchild Semiconductor

FAIRS27805-1.pdf?t.download=true&u=5oefqw Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 700V 6.2A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
на замовлення 3322 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
124+160 грн
Мінімальне замовлення: 124
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Технічний опис FQB6N70TM Fairchild Semiconductor

Description: MOSFET N-CH 700V 6.2A D2PAK, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V, Power Dissipation (Max): 3.13W (Ta), 142W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V.

Інші пропозиції FQB6N70TM

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
FQB6N70TM FQB6N70TM Виробник : ON Semiconductor fqb6n70.pdf Trans MOSFET N-CH 700V 6.2A 3-Pin(2+Tab) D2PAK T/R
товар відсутній
FQB6N70TM FQB6N70TM Виробник : onsemi FQB6N70%2C%20FQI6N70.pdf Description: MOSFET N-CH 700V 6.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
товар відсутній