на замовлення 497 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.49 грн |
| 10+ | 91.91 грн |
| 25+ | 77.94 грн |
| 100+ | 65.19 грн |
| 250+ | 63.94 грн |
| 500+ | 61.56 грн |
| 1000+ | 54.95 грн |
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Технічний опис FQP12P10 onsemi / Fairchild
Description: MOSFET P-CH 100V 11.5A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 5.75A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V.
Інші пропозиції FQP12P10
| Фото | Назва | Виробник | Інформація |
Доступність |
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FQP12P10 | Виробник : ON Semiconductor |
 Trans MOSFET P-CH 100V 11.5A 3-Pin(3+Tab) TO-220 Tube |
товар відсутній |
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| FQP12P10 | Виробник : ON Semiconductor |
Trans MOSFET P-CH 100V 11.5A 3-Pin(3+Tab) TO-220 Tube |
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FQP12P10 | Виробник : ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -8.1A; Idm: -46A; 75W Mounting: THT Case: TO220AB Kind of package: tube Power dissipation: 75W Drain current: -8.1A Kind of channel: enhanced Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±30V On-state resistance: 0.29Ω Pulsed drain current: -46A Gate charge: 27nC Polarisation: unipolar кількість в упаковці: 1 шт |
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FQP12P10 | Виробник : onsemi |
Description: MOSFET P-CH 100V 11.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 5.75A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
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FQP12P10 | Виробник : ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -8.1A; Idm: -46A; 75W Mounting: THT Case: TO220AB Kind of package: tube Power dissipation: 75W Drain current: -8.1A Kind of channel: enhanced Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±30V On-state resistance: 0.29Ω Pulsed drain current: -46A Gate charge: 27nC Polarisation: unipolar |
товар відсутній |