на замовлення 759 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.03 грн |
| 10+ | 91.36 грн |
| 100+ | 61.42 грн |
| 500+ | 50.74 грн |
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Технічний опис FQP2N40-F080 onsemi / Fairchild
Description: MOSFET N-CH 400V 1.8A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), Rds On (Max) @ Id, Vgs: 5.8Ohm @ 900mA, 10V, Power Dissipation (Max): 40W (Ta), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V.
Інші пропозиції FQP2N40-F080
| Фото | Назва | Виробник | Інформація |
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FQP2N40-F080 | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 400V 1.8A 3-Pin(3+Tab) TO-220 Tube |
товар відсутній |
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FQP2N40-F080 | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.14A; Idm: 7.2A; 40W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 40W Polarisation: unipolar Gate charge: 5.5nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 7.2A Drain-source voltage: 400V Drain current: 1.14A On-state resistance: 5.8Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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FQP2N40-F080 | Виробник : onsemi |
Description: MOSFET N-CH 400V 1.8A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 5.8Ohm @ 900mA, 10V Power Dissipation (Max): 40W (Ta) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
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FQP2N40-F080 | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.14A; Idm: 7.2A; 40W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 40W Polarisation: unipolar Gate charge: 5.5nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 7.2A Drain-source voltage: 400V Drain current: 1.14A On-state resistance: 5.8Ω Type of transistor: N-MOSFET |
товар відсутній |