FQU12N20TU ON Semiconductor / Fairchild
на замовлення 1733 шт:
термін постачання 21-30 дні (днів)
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Технічний опис FQU12N20TU ON Semiconductor / Fairchild
Description: MOSFET N-CH 200V 9A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 55W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V.
Інші пропозиції FQU12N20TU
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FQU12N20TU | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) IPAK Tube |
товар відсутній |
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| FQU12N20TU | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 55W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FQU12N20TU | Виробник : onsemi |
Description: MOSFET N-CH 200V 9A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V |
товар відсутній |
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| FQU12N20TU | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 55W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |