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FS100R07N3E4B11BOSA1

FS100R07N3E4B11BOSA1 Infineon Technologies


1047ds_fs100r07n3e4_b11_2_05b15d.pdffolderiddb3a304412b407950112b4095.pdf Виробник: Infineon Technologies
Trans IGBT Module N-CH 650V 100A 335000mW 35-Pin ECONO3-4 Tray
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Технічний опис FS100R07N3E4B11BOSA1 Infineon Technologies

Description: IGBT MOD 650V 100A 335W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 335 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V.

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FS100R07N3E4B11BOSA1 Виробник : Infineon Technologies FS100R07N3E4_B11.pdf Description: IGBT MOD 650V 100A 335W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
товар відсутній