FS10R12VT3BOMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 16A 64W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 64 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
Description: IGBT MODULE 1200V 16A 64W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 64 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 700 pF @ 25 V
на замовлення 118 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
16+ | 1327.72 грн |
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Технічний опис FS10R12VT3BOMA1 Infineon Technologies
Description: IGBT MODULE 1200V 16A 64W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A, NTC Thermistor: No, Supplier Device Package: Module, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 64 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 700 pF @ 25 V.
Інші пропозиції FS10R12VT3BOMA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
FS10R12VT3BOMA1 | Виробник : Infineon Technologies | Trans IGBT Module N-CH 1200V 16A 64000000mW 11-Pin EASY750-1 Tray |
товар відсутній |
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FS10R12VT3BOMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Type of module: IGBT Technology: EasyPACK™ Topology: IGBT three-phase bridge Case: AG-EASY750-1 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 20A Power dissipation: 64W кількість в упаковці: 40 шт |
товар відсутній |
||
FS10R12VT3BOMA1 | Виробник : Infineon Technologies |
Description: IGBT MODULE 1200V 16A 64W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 64 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 700 pF @ 25 V |
товар відсутній |
||
FS10R12VT3BOMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Type of module: IGBT Technology: EasyPACK™ Topology: IGBT three-phase bridge Case: AG-EASY750-1 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 20A Power dissipation: 64W |
товар відсутній |