FS900R08A2P2B32BOSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT MODULE PACK2 DRV HYBRID2-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 550A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID2-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1546 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 105 nF @ 25 V
на замовлення 122 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 55551.69 грн |
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Технічний опис FS900R08A2P2B32BOSA1 Infineon Technologies
Description: IGBT MODULE PACK2 DRV HYBRID2-1, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 550A, NTC Thermistor: Yes, Supplier Device Package: AG-HYBRID2-1, Part Status: Obsolete, Current - Collector (Ic) (Max): 550 A, Voltage - Collector Emitter Breakdown (Max): 750 V, Power - Max: 1546 W, Current - Collector Cutoff (Max): 500 µA, Input Capacitance (Cies) @ Vce: 105 nF @ 25 V.
Інші пропозиції FS900R08A2P2B32BOSA1
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FS900R08A2P2B32BOSA1 | Виробник : Infineon Technologies |
Description: IGBT MODULE PACK2 DRV HYBRID2-1 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 550A NTC Thermistor: Yes Supplier Device Package: AG-HYBRID2-1 Part Status: Obsolete Current - Collector (Ic) (Max): 550 A Voltage - Collector Emitter Breakdown (Max): 750 V Power - Max: 1546 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 105 nF @ 25 V |
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