FST12030 GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 30V 120A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Description: DIODE MODULE 30V 120A TO249AB
Packaging: Bulk
Package / Case: TO-249AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: TO-249AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
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Технічний опис FST12030 GeneSiC Semiconductor
Description: DIODE MODULE 30V 120A TO249AB, Packaging: Bulk, Package / Case: TO-249AB, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 120A (DC), Supplier Device Package: TO-249AB, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A, Current - Reverse Leakage @ Vr: 2 mA @ 20 V.
Інші пропозиції FST12030
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
FST12030 | Виробник : GeneSiC Semiconductor | Discrete Semiconductor Modules 30V - 120A Schottky Rectifier |
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