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G3R160MT12J-TR

G3R160MT12J-TR GeneSiC Semiconductor

G3R160MT12J.pdf Виробник: GeneSiC Semiconductor
Description: 1200V 160M TO-263-7 G3R SIC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+475.91 грн
10+ 411.49 грн
25+ 394.48 грн
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Технічний опис G3R160MT12J-TR GeneSiC Semiconductor

Description: 1200V 160M TO-263-7 G3R SIC MOSF, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 18V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 5mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V.

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Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
G3R160MT12J-TR Виробник : GeneSiC Semiconductor G3R160MT12J.pdf Silicon Carbide MOSFET N Channel Enhancement Mode T&R
товар відсутній
G3R160MT12J-TR G3R160MT12J-TR Виробник : GeneSiC Semiconductor G3R160MT12J.pdf Description: 1200V 160M TO-263-7 G3R SIC MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V
товар відсутній
G3R160MT12J-TR G3R160MT12J-TR Виробник : GeneSiC Semiconductor G3R160MT12J-2449111.pdf MOSFET 1200V 160mohm TO-263-7 G3R SiC MOSFET
товар відсутній