Технічний опис G3R60MT07J-TR GeneSiC Semiconductor
Description: 650V 60M TO-263-7 G3R SIC MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Power Dissipation (Max): 182W (Tc), Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, Drain to Source Voltage (Vdss): 750 V.
Інші пропозиції G3R60MT07J-TR
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G3R60MT07J-TR | Виробник : GeneSiC Semiconductor |
 Description: 650V 60M TO-263-7 G3R SIC MOSFETPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Power Dissipation (Max): 182W (Tc) Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V Drain to Source Voltage (Vdss): 750 V |
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G3R60MT07J-TR | Виробник : GeneSiC Semiconductor |
Description: 650V 60M TO-263-7 G3R SIC MOSFET Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Power Dissipation (Max): 182W (Tc) Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V Drain to Source Voltage (Vdss): 750 V |
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G3R60MT07J-TR | Виробник : GeneSiC Semiconductor |
MOSFET 650V 60mohm TO-263-7 G3R SiC MOSFET |
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