Продукція > GOFORD SEMICONDUCTOR > G4616
G4616

G4616 Goford Semiconductor

GOFORD-G4616.pdf Виробник: Goford Semiconductor
Description: MOSFET N/P-CH 40V 8A/7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 2.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V, 520pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4000+10.27 грн
16000+ 9.11 грн
32000+ 8.21 грн
Мінімальне замовлення: 4000
Відгуки про товар
Написати відгук

Технічний опис G4616 Goford Semiconductor

Description: MOSFET N/P-CH 40V 8A/7A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Tc), 2.8W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V, 520pF @ 20V, Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, 13nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP.

Інші пропозиції G4616 за ціною від 17.27 грн до 37.99 грн

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
G4616 G4616 Виробник : Goford Semiconductor GOFORD-G4616.pdf Description: MOSFET N/P-CH 40V 8A/7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 2.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V, 520pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 638 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+37.99 грн
10+ 31.82 грн
100+ 22.03 грн
500+ 17.27 грн
Мінімальне замовлення: 8
G4616 G4616 Виробник : Goford Semiconductor GOFORD-G4616.pdf Description: MOSFET N/P-CH 40V 8A/7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 2.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V, 520pF @ 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
товар відсутній