GD25LE128ESIGR GigaDevice Semiconductor (HK) Limited


2023__Gde.pdf Виробник: GigaDevice Semiconductor (HK) Limited
Description: 128MBIT, 1.8V, SOP8 208MIL, INDU
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 60µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 16M x 8
на замовлення 1990 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+155.6 грн
10+ 136.52 грн
25+ 132.8 грн
50+ 123.99 грн
100+ 110.83 грн
250+ 110.51 грн
500+ 107.06 грн
1000+ 102.51 грн
Мінімальне замовлення: 2
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Технічний опис GD25LE128ESIGR GigaDevice Semiconductor (HK) Limited

Description: 128MBIT, 1.8V, SOP8 208MIL, INDU, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.209", 5.30mm Width), Mounting Type: Surface Mount, Memory Size: 128Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 2V, Technology: FLASH - NOR (SLC), Clock Frequency: 133 MHz, Memory Format: FLASH, Supplier Device Package: 8-SOP, Part Status: Active, Write Cycle Time - Word, Page: 60µs, 2.4ms, Memory Interface: SPI - Quad I/O, QPI, Access Time: 6 ns, Memory Organization: 16M x 8.

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Ціна без ПДВ
GD25LE128ESIGR Виробник : GigaDevice Semiconductor (HK) Limited 2023__Gde.pdf Description: 128MBIT, 1.8V, SOP8 208MIL, INDU
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Part Status: Active
Write Cycle Time - Word, Page: 60µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 16M x 8
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