GD25LQ80CTIGR GigaDevice Semiconductor (HK) Limited
Виробник: GigaDevice Semiconductor (HK) LimitedDescription: IC FLASH 8MBIT SPI/QUAD I/O 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.1V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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Технічний опис GD25LQ80CTIGR GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 8MBIT SPI/QUAD I/O 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 2.1V, Technology: FLASH - NOR, Clock Frequency: 104 MHz, Memory Format: FLASH, Supplier Device Package: 8-SOP, Write Cycle Time - Word, Page: 50µs, 2.4ms, Memory Interface: SPI - Quad I/O, Memory Organization: 1M x 8, DigiKey Programmable: Not Verified.
Інші пропозиції GD25LQ80CTIGR
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GD25LQ80CTIGR | Виробник : GigaDevice Semiconductor (HK) Limited |
Description: IC FLASH 8MBIT SPI/QUAD I/O 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
товар відсутній |
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GD25LQ80CTIGR | Виробник : GigaDevice |
NOR Flash 8Mbit NOR Flash /1.8v /SOP8 150mil /Industrial(-40? to +85?) /T&R |
товар відсутній |