GD25LQ80EEAGR GigaDevice Semiconductor (HK) Limited
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 8MBIT SPI/QUAD 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (3x2)
Write Cycle Time - Word, Page: 100µs, 4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 1M x 8
Description: IC FLASH 8MBIT SPI/QUAD 8USON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (3x2)
Write Cycle Time - Word, Page: 100µs, 4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 1M x 8
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Технічний опис GD25LQ80EEAGR GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 8MBIT SPI/QUAD 8USON, Packaging: Tape & Reel (TR), Package / Case: 8-XFDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 1.65V ~ 2V, Technology: FLASH - NOR (SLC), Clock Frequency: 133 MHz, Memory Format: FLASH, Supplier Device Package: 8-USON (3x2), Write Cycle Time - Word, Page: 100µs, 4ms, Memory Interface: SPI - Quad I/O, QPI, Access Time: 6 ns, Memory Organization: 1M x 8.
Інші пропозиції GD25LQ80EEAGR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| GD25LQ80EEAGR | Виробник : GigaDevice |
 NOR Flash |
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