GD25Q128EYIGR GigaDevice Semiconductor (HK) Limited


2023__Gde.pdf Виробник: GigaDevice Semiconductor (HK) Limited
Description: 128MBIT, 3.3V, WSON8 8*6MM, INDU
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 70µs, 2.4ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 16M x 8
на замовлення 2823 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+138.68 грн
10+ 122.06 грн
25+ 118.76 грн
50+ 110.87 грн
100+ 99.11 грн
250+ 98.82 грн
500+ 95.73 грн
1000+ 91.67 грн
Мінімальне замовлення: 3
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Технічний опис GD25Q128EYIGR GigaDevice Semiconductor (HK) Limited

Description: 128MBIT, 3.3V, WSON8 8*6MM, INDU, Packaging: Tape & Reel (TR), Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 128Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR (SLC), Clock Frequency: 133 MHz, Memory Format: FLASH, Supplier Device Package: 8-WSON (6x8), Part Status: Active, Write Cycle Time - Word, Page: 70µs, 2.4ms, Memory Interface: SPI - Quad I/O, Access Time: 7 ns, Memory Organization: 16M x 8.

Інші пропозиції GD25Q128EYIGR

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
GD25Q128EYIGR GD25Q128EYIGR Виробник : GIGADEVICE GigaDevice-Selection-Guide-2021.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; Quad I/O,SPI; 120MHz; 1.65÷2V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: Quad I/O; SPI
Operating frequency: 120MHz
Case: WSON8
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.65...2V
кількість в упаковці: 3000 шт
товар відсутній
GD25Q128EYIGR Виробник : GigaDevice Semiconductor (HK) Limited 2023__Gde.pdf Description: 128MBIT, 3.3V, WSON8 8*6MM, INDU
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 70µs, 2.4ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 16M x 8
товар відсутній
GD25Q128EYIGR GD25Q128EYIGR Виробник : GigaDevice gd25wq128e_rev1_2_20210926-1825480.pdf NOR Flash
товар відсутній
GD25Q128EYIGR GD25Q128EYIGR Виробник : GIGADEVICE GigaDevice-Selection-Guide-2021.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; Quad I/O,SPI; 120MHz; 1.65÷2V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: Quad I/O; SPI
Operating frequency: 120MHz
Case: WSON8
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.65...2V
товар відсутній