GD600SGX170C2S STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Case: C2 62mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Case: C2 62mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
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Технічний опис GD600SGX170C2S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V, Type of module: IGBT, Semiconductor structure: single transistor, Max. off-state voltage: 1.7kV, Case: C2 62mm, Electrical mounting: screw, Topology: single transistor, Mechanical mounting: screw, Collector current: 600A, Pulsed collector current: 1.2kA, Technology: Trench FS IGBT, Gate-emitter voltage: ±20V, кількість в упаковці: 12 шт.
Інші пропозиції GD600SGX170C2S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| GD600SGX170C2S | Виробник : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.7kV Case: C2 62mm Electrical mounting: screw Topology: single transistor Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Trench FS IGBT Gate-emitter voltage: ±20V |
товар відсутній |