GD800HFY120C3S STARPOWER SEMICONDUCTOR


Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A
Pulsed collector current: 1.6kA
Collector current: 800A
Gate-emitter voltage: ±20V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C3 130mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 8 шт
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Технічний опис GD800HFY120C3S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A, Pulsed collector current: 1.6kA, Collector current: 800A, Gate-emitter voltage: ±20V, Electrical mounting: screw, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Max. off-state voltage: 1.2kV, Type of module: IGBT, Case: C3 130mm, Technology: Advanced Trench FS IGBT, Topology: IGBT half-bridge, кількість в упаковці: 8 шт.

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GD800HFY120C3S Виробник : STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A
Pulsed collector current: 1.6kA
Collector current: 800A
Gate-emitter voltage: ±20V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C3 130mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
товар відсутній