GS1MWG_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 1KV 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 1127 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
24+ | 12.28 грн |
33+ | 8.48 грн |
100+ | 4.56 грн |
500+ | 3.36 грн |
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Технічний опис GS1MWG_R1_00001 Panjit International Inc.
Description: DIODE GEN PURP 1KV 1A SMA, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 7pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Not For New Designs, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 1000 V.
Інші пропозиції GS1MWG_R1_00001 за ціною від 1.4 грн до 13.79 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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GS1MWG_R1_00001 | Виробник : Panjit | Diodes - General Purpose, Power, Switching 1000V,General Purpose Rectifiers,SMA(W),1A |
на замовлення 107780 шт: термін постачання 21-30 дні (днів) |
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GS1MWG_R1_00001 | Виробник : PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA-W Max. forward voltage: 1.1V Max. forward impulse current: 30A Leakage current: 1µA Kind of package: reel; tape кількість в упаковці: 1 шт |
товар відсутній |
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GS1MWG_R1_00001 | Виробник : Panjit International Inc. |
Description: DIODE GEN PURP 1KV 1A SMA Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
товар відсутній |
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GS1MWG-R1-00001 | Виробник : Panjit | Diodes - General Purpose, Power, Switching |
товар відсутній |
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GS1MWG_R1_00001 | Виробник : PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA-W Max. forward voltage: 1.1V Max. forward impulse current: 30A Leakage current: 1µA Kind of package: reel; tape |
товар відсутній |