Технічний опис HBDM60V600W-7 Diodes Inc
Description: TRANS NPN/PNP 65V/60V SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: NPN, PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 200mW, Current - Collector (Ic) (Max): 500mA, 600mA, Voltage - Collector Emitter Breakdown (Max): 65V, 60V, Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V / 100 @ 150mA, 10V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-363, Part Status: Obsolete.
Інші пропозиції HBDM60V600W-7
| Фото | Назва | Виробник | Інформація |
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HBDM60V600W-7 | Виробник : Diodes Incorporated |
 Description: TRANS NPN/PNP 65V/60V SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: NPN, PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 500mA, 600mA Voltage - Collector Emitter Breakdown (Max): 65V, 60V Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V / 100 @ 150mA, 10V Frequency - Transition: 100MHz Supplier Device Package: SOT-363 Part Status: Obsolete |
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HBDM60V600W-7 | Виробник : Diodes Incorporated |
Description: TRANS NPN/PNP 65V/60V SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: NPN, PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 500mA, 600mA Voltage - Collector Emitter Breakdown (Max): 65V, 60V Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V / 100 @ 150mA, 10V Frequency - Transition: 100MHz Supplier Device Package: SOT-363 Part Status: Obsolete |
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HBDM60V600W-7 | Виробник : Diodes Incorporated |
Bipolar Transistors - BJT 200mW Half H-Bridge |
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| HBDM60V600W-7 | Виробник : onsemi / Fairchild |
Bipolar Transistors - BJT |
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