Технічний опис HGTG7N60A4D FAIRCHILD
Description: IGBT 600V 34A 125W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 34 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A, Supplier Device Package: TO-247-3, Td (on/off) @ 25°C: 11ns/100ns, Switching Energy: 55µJ (on), 60µJ (off), Test Condition: 390V, 7A, 25Ohm, 15V, Gate Charge: 37 nC, Current - Collector (Ic) (Max): 34 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 56 A, Power - Max: 125 W.
Інші пропозиції HGTG7N60A4D
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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HGTG7N60A4D | Виробник : ON Semiconductor |
 Trans IGBT Chip N-CH 600V 34A 125000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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HGTG7N60A4D | Виробник : onsemi |
Description: IGBT 600V 34A 125W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 11ns/100ns Switching Energy: 55µJ (on), 60µJ (off) Test Condition: 390V, 7A, 25Ohm, 15V Gate Charge: 37 nC Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 125 W |
товар відсутній |
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HGTG7N60A4D | Виробник : onsemi / Fairchild |
IGBT Transistors 600V N-Ch IGBT SMPS Series HF |
товар відсутній |