HGTP7N60B3D Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 480V, 7A, 50Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 60 W
на замовлення 2590 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
278+ | 71.25 грн |
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Технічний опис HGTP7N60B3D Fairchild Semiconductor
Description: IGBT, 14A, 600V, N-CHANNEL, TO-2, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 37 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A, Supplier Device Package: TO-220AB, Td (on/off) @ 25°C: 26ns/130ns, Switching Energy: 160µJ (on), 120µJ (off), Test Condition: 480V, 7A, 50Ohm, 15V, Gate Charge: 37 nC, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 56 A, Power - Max: 60 W.
Інші пропозиції HGTP7N60B3D за ціною від 71.25 грн до 71.25 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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HGTP7N60B3D | Виробник : Harris Corporation |
Description: IGBT, 14A, 600V, N-CHANNEL, TO-2 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A Supplier Device Package: TO-220AB Td (on/off) @ 25°C: 26ns/130ns Switching Energy: 160µJ (on), 120µJ (off) Test Condition: 480V, 7A, 50Ohm, 15V Gate Charge: 37 nC Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 60 W |
на замовлення 16763 шт: термін постачання 21-31 дні (днів) |
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HGTP7N60B3D | Виробник : onsemi |
Description: IGBT 600V 14A 60W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 26ns/130ns Switching Energy: 160µJ (on), 120µJ (off) Test Condition: 480V, 7A, 50Ohm, 15V Gate Charge: 23 nC Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 60 W |
товар відсутній |
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HGTP7N60B3D | Виробник : onsemi / Fairchild | IGBT Transistors PWR IGBT 14A 600V N-CHANNEL |
товар відсутній |