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HN3C51F-GR(TE85L,F Toshiba

44180155428752114418013963881033hn3c51f_datasheet_en_20140301.pdf.pdf

Виробник: Toshiba
Trans GP BJT NPN 120V 0.1A 6-Pin SM T/R

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Технічний опис HN3C51F-GR(TE85L,F Toshiba

Description: TRANS 2NPN 120V 0.1A SM6, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 150°C (TJ), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 120V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 100MHz, Supplier Device Package: SM6.

Інші пропозиції HN3C51F-GR(TE85L,F

Фото	Назва	Виробник	Інформація	Доступність	Ціна без ПДВ
	HN3C51F-GR(TE85L,F	Виробник : Toshiba Semiconductor and Storage	Description: TRANS 2NPN 120V 0.1A SM6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SM6	товар відсутній