HP8MB5TB1 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: 40V 16.5A, DUAL NCH+PCH, HSOP8,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
Rds On (Max) @ Id, Vgs: 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Description: 40V 16.5A, DUAL NCH+PCH, HSOP8,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
Rds On (Max) @ Id, Vgs: 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 38.45 грн |
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Технічний опис HP8MB5TB1 Rohm Semiconductor
Description: 40V 16.5A, DUAL NCH+PCH, HSOP8,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 20W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V, Rds On (Max) @ Id, Vgs: 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP.
Інші пропозиції HP8MB5TB1 за ціною від 33.56 грн до 98.67 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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HP8MB5TB1 | Виробник : Rohm Semiconductor |
Description: 40V 16.5A, DUAL NCH+PCH, HSOP8, Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 20W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V Rds On (Max) @ Id, Vgs: 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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HP8MB5TB1 | Виробник : ROHM Semiconductor | MOSFET 40V 16.5A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8MB5 is a low on-resistance MOSFET ideal for switching applications. |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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HP8MB5TB1 | Виробник : Rohm Semiconductor | Trans MOSFET N/P-CH 40V 6A/7A 8-Pin HSOP EP T/R |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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