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IAUC120N04S6N008ATMA1 Infineon Technologies


infineon-iauc120n04s6n008-datasheet-v01_00-en.pdf Виробник: Infineon Technologies
Automotive Power Mosfet
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Технічний опис IAUC120N04S6N008ATMA1 Infineon Technologies

Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Ta), Rds On (Max) @ Id, Vgs: 0.8mOhm @ 60A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3V @ 90µA, Supplier Device Package: PG-TDSON-8-43, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 25 V, Qualification: AEC-Q101.

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IAUC120N04S6N008ATMA1 Виробник : Infineon Technologies Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7150 pF @ 25 V
Qualification: AEC-Q101
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IAUC120N04S6N008ATMA1 Виробник : Infineon Technologies Infineon_IAUC120N04S6N008_DataSheet_v01_00_EN-3372552.pdf MOSFET
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