IAUC120N06S5L032ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 60V 120A TDSON-8-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 40.55 грн |
| 10000+ | 37.25 грн |
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Технічний опис IAUC120N06S5L032ATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 120A TDSON-8-34, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tj), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 44µA, Supplier Device Package: PG-TDSON-8-34, Part Status: Active, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V.
Інші пропозиції IAUC120N06S5L032ATMA1 за ціною від 38.48 грн до 109.27 грн
| Фото | Назва | Виробник | Інформація |
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IAUC120N06S5L032ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 120A TDSON-8-34 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 44µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V |
на замовлення 36681 шт: термін постачання 21-31 дні (днів) |
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IAUC120N06S5L032ATMA1 | Виробник : Infineon Technologies |
MOSFET MOSFET_)40V 60V) |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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IAUC120N06S5L032ATMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 60V 129A Automotive 8-Pin TDSON EP T/R |
товар відсутній |
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| IAUC120N06S5L032ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Pulsed drain current: 364A Power dissipation: 94W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 51.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
товар відсутній |
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| IAUC120N06S5L032ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Pulsed drain current: 364A Power dissipation: 94W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 51.5nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |